SiP4282ADVP-3-E3
SiP4282ADVP-3 is used in VIA’s C7-M and Nano platform, it’s a slew rate controlled high side load switch that prevents in-rush current at heavy capacitive load, and minimizes switching noise. Vishay designs and manufactures series of integrated load switch products. Compared with discrete components, they provide cost competitive solutions with extra value added features including slew rate control, switch off discharge, current limit, short-circuit protection, reverse current blocking, and compact package size. New products feature low logic threshold as below 1.2V, and guaranteed low ON resistance performance at 1.2V. These ease your designs and enhance system protections.
Si4168DY-T1-GE3
SiP4168DY is used in VIA’s C7-M and Nano platform, it’s a SO8 package with Vishay’s newest MOSFET process—Gen III. The spec of this device is 30Vds/20Vgs/5.7m ohm@10Vgs /7.6mohm@4.5Vgs. Vishay’s Gen III devices reduce on-resistance per silicon area by more than 35 %, while also reducing gate charge per area by about 10 %. The reduced on-resistance and gate charge lower conduction and switching losses, reducing energy consumption and prolonging battery life in electronic devices.
SiS412DN-T1-GE3
SiS412DN is used in VIA’s C7-M and Nano platform, it’s a PPAK-1212 package with Vishay’s newest MOSFET process—Gen III. The spec of this device is 30Vds/20Vgs/24m ohm@10Vgs /30mohm@4.5Vgs. The PPAK-1212 package has the feature of 70% smaller size than SO8 package and 92% lower thermal resistance than SO8 package. Vishay’s Gen III devices reduce on-resistance per silicon area by more than 35 %, while also reducing gate charge per area by about 10 %. The reduced on-resistance and gate charge lower conduction and switching losses, reducing energy consumption and prolonging battery life in electronic devices.
Datasheet Download
Vishay_SiP4282ADVP-3_20090609.pdf
Vishay_Si4168DY_20090609.pdf
Vishay_SiS412DN_20090609.pdf
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